Event Details

Exploring opportunities for new semiconductor alloys for photonic devices in the infrared

This talk will discuss advances in semiconductor materials for applications in photonics. Focusing mainly on III-V semiconductors, the talk will consider current challenges in photonic devices and how new materials may provide opportunities to improve existing technology, for example through more efficient use of energy, to develop new devices with improved functionality or to develop new applications. The talk will focus on issues with conventional III-V based materials and devices and how new classes of III-V semiconductors incorporating bismuth and/or nitrogen offer opportunities to enhance the efficiency and extend the wavelength range of photonic devices, such as lasers, photodetectors and photovoltaics. One important example of this is Auger suppression innear- and mid-infrared lasers. As shown in the figure, the threshold current of lasers operating in this spectral range is strongly influenced by Auger recombination. Bismides offer the potential to remove one of the key Auger processes but growth of these alloys is challenging. The current status of progress towards achieving this aim will be discussed. If time permits, the talk will also discuss the development of group IV materials, such as GeSn, and their potential for silicon-based devices in the mid-infrared.