Dr Andrew Marshall

Lecturer

Research Overview

My research is focused on novel materials and structures for next generation electronic devices, including photodetectors, solar cells and thermo photovoltaics. Currently I am developing the mismatched growth of GaSb and InAs based materials with atomically abrupt interfaces on GaAs and Silicon substrates, including studying the properties of the novel hetero-lattice interfaces formed and exciting new devices exploiting this technology in collaboration with my industrial partners. I am also developing the micro and nanoscale fabrication of novel devices using the new state of the art facilities within the Lancaster Quantum Technology Centre.

Room temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires
Alhodaib, A., Noori, Y., Carrington, P.J., Sanchez, A., Thompson, M.D., Young, R.J., Krier, A., Marshall, A.R.J. 30/11/2017 In: Nano Letters.
Journal article

Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells
Tang, L., Xu, C., Liu, Z., Lu, Q., Marshall, A., Krier, A. 04/2017 In: Solar Energy Materials and Solar Cells. 163, p. 263-269. 7 p.
Journal article

Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells
Carrington, P.J., Montesdeoca Cardenes, D., Fujita, H., James Asirvatham, J.S., Wagener, M., Botha, J.R., Marshall, A.R.J., Krier, A. 23/09/2016 In: Proceedings of SPIE. 9937, 7 p.
Journal article

InSb-based quantum dot nanostructures for mid-infrared photonic devices
Carrington, P.J., Repiso Menendez, E., Lu, Q., Fujita, H., Marshall, A.R.J., Zhuang, Q., Krier, A. 16/09/2016 In: Proceedings of SPIE. 9919
Journal article

Low bandgap InAs-based thermophotovoltaic cells for heat-electricity conversion
Krier, A., Yin, M., Marshall, A.R.J., Krier, S.E. 06/2016 In: Journal of Electronic Materials. 45, 6, p. 2826-2830. 5 p.
Journal article

Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy
Craig, A., Carrington, P.J., Liu, H., Marshall, A.R.J. 1/02/2016 In: Journal of Crystal Growth. 435, p. 56-61. 6 p.
Journal article

Low leakage-current InAsSb nanowire photodetectors on silicon
Thompson, M.D., Alhodaib, A., Craig, A.P., Robson, A.J., Aziz, A., Krier, A., Svensson, J., Wernersson, L., Sanchez, A.M., Marshall, A.R.J. 13/01/2016 In: Nano Letters. 16, 1, p. 182-187. 6 p.
Journal article

Open-circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration
Fujita, H., Carrington, P.J., Wagener, M.C., Botha, J.R., Marshall, A.R.J., James, J., Krier, A., Lee, K., Ekins-Daukes, N.J. 12/2015 In: Progress in Photovoltaics: Research and Applications. 23, 12, p. 1896-1900. 5 p.
Journal article

Low bandgap mid-infrared thermophotovoltaic arrays based on InAs
Krier, A., Yin, M., Marshall, A., Kesaria, M., Krier, S., McDougall, S., Meredith, W., Johnson, A., Inskip, J., Scholes, A. 11/2015 In: Infrared Physics and Technology. 73, p. 126-129. 4 p.
Journal article

Delta doping and positioning effects of type II GaSb quantum dots in GaAs solar cell
James Asirvatham, J.S., Fujita, H., Fernández-Delgado, N., Herrera, M., Molina, S.I., Marshall, A.R.J., Krier, A. 28/10/2015 In: Materials Research Innovations. 19, 7, p. 512-516. 5 p.
Journal article

InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance
Craig, A., Thompson, M., Tian, Z., Krishna, S., Krier, A., Marshall, A. 24/08/2015 In: Semiconductor Science and Technology. 30, 10, 7 p.
Journal article

Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP
Wheatley, R., Kesaria, M., Mwast, L., Kirch, J., Kuech, T., Marshall, A., Zhuang, Q., Krier, A. 10/06/2015 In: Applied Physics Letters. 106, 4 p.
Journal article

Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb
Craig, A., Jain, M., Wicks, G., Golding, T., Hossain, K., McEwan, K., Howle, C., Percy, B., Marshall, A. 20/05/2015 In: Applied Physics Letters. 106, 20, 5 p.
Journal article

Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer
Hayton, J.P., Marshall, A.R.J., Thompson, M.D., Krier, A. 19/05/2015 In: AIMS Materials Science. 2, 2, p. 86-96. 11 p.
Journal article

Reprint of "mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb"
Craig, A., Marshall, A.R.J., Tian, Z., Krishna, S. 12/05/2015 In: Infrared Physics and Technology. 70, p. 107-110. 4 p.
Journal article

GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface
Marshall, A., Craig, A., Reyner, C.J., Huffaker, D.L. 05/2015 In: Infrared Physics and Technology. 70, p. 168-170. 3 p.
Journal article

Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs, using an interfacial misfit array, and on native GaSb
Craig, A., Marshall, A., Tian, Z., Krishna, S. 11/2014 In: Infrared Physics and Technology. 67, p. 210-213. 4 p.
Journal article

Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays
Craig, A., Reyner, C.J., Marshall, A., Huffaker, D.L. 28/05/2014 In: Applied Physics Letters. 104, 4 p.
Journal article

InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers
Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R., Krier, A. 12/05/2014 In: Semiconductor Science and Technology. 29, 7, 8 p.
Journal article

Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitation
James Asirvatham, J., Fujita, H., Carrington, P., Marshall, A., Krier, A. 04/2014 In: IET Optoelectronics. 8, 2, p. 76-80. 5 p.
Journal article

Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells
Fujita, H., James Asirvatham, J., Carrington, P., Marshall, A., Krier, A., Wagener, M.C., Botha, J.R. 03/2014 In: Semiconductor Science and Technology. 29, 3, 5 p.
Journal article

Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays
Craig, A., Marshall, A., Tian, Z., Krishna, S., Krier, A. 16/12/2013 In: Applied Physics Letters. 103, 4 p.
Journal article

Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement
Green, J.E., Loh, W.S., Marshall, A.R.J., Ng, B.K., Tozer, R.C., David, J.P.R., Soloviev, S.I., Sandvik, P.M. 04/2012 In: IEEE Transactions on Electron Devices. 59, 4, p. 1030-1036. 7 p.
Journal article

Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique
Nunna, K.C., Tan, S.L., Reyner, C.J., Marshall, A.R.J., Liang, B., Jallipalli, A., David, J.P.R., Huffaker, D.L. 1/02/2012 In: IEEE Photonics Technology Letters. 24, 3, p. 218-220. 3 p.
Journal article

Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing
Ker, P.J., Marshall, A.R.J., David, J.P.R., Tan, C.H. 02/2012 In: Physica Status Solidi C. 9, 2, p. 310-313. 4 p.
Journal article

High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit
Marshall, A.R.J., Ker, P.J., Krysa, A., David, J.P.R., Tan, C.H. 7/11/2011 In: Optics Express. 19, 23, p. 23341-23349. 9 p.
Journal article

Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes
Ker, P.J., Marshall, A.R.J., Krysa, A.B., David, J.P.R., Tan, C.H. 08/2011 In: IEEE Journal of Quantum Electronics. 47, 8, p. 1123-1128. 6 p.
Journal article

Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K
Marshall, A.R.J., Vines, P., Ker, P.J., David, J.P.R., Tan, C.H. 06/2011 In: IEEE Journal of Quantum Electronics. 47, 6, p. 858-864. 7 p.
Journal article

The InAs electron avalanche photodiode
Marshall, A. 22/03/2011 In: Advances in photodiodes. InTech p. 447-466. 20 p. Electronic ISBN: 9789533071633.
Chapter

Impact Ionization in InAs Electron Avalanche Photodiodes
Marshall, A.R.J., David, J.P.R., Tan, C.H. 10/2010 In: IEEE Transactions on Electron Devices. 57, 10, p. 2631-2638. 8 p.
Journal article

High gain InAs electron-avalanche photodiodes for optical communication
Marshall, A.R.J., Vines, P., Xie, S., David, J.P.R., Tan, C.H. 2010 In: 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM). New York : IEEE p. -. 4 p. ISBN: 978-1-4244-5920-9.
Conference contribution

Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes
Marshall, A.R.J., Tan, C.H., Steer, M.J., David, J.P.R. 1/07/2009 In: IEEE Photonics Technology Letters. 21, 13, p. 866-868. 3 p.
Journal article

Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes
Marshall, A.R.J., Tan, C.H., Steer, M.J., David, J.P.R. 15/09/2008 In: Applied Physics Letters. 93, 11, p. -. 3 p.
Journal article

Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model
Mun, S.C.L.T., Tan, C.H., Goh, Y.L., Marshall, A.R.J., David, J.P.R. 1/07/2008 In: Journal of Applied Physics. 104, 1, p. -. 6 p.
Journal article

Design considerations for In0.52Al0.48As based avalanche photodiodes
Mun, S.C.L.T., Tan, C.H., Marshall, A.R.J., Goh, Y.L., Tan, L.J.J., David, J.P.R. 2008 In: 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008. . New York : IEEE p. 331-333. 3 p.
Paper

Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H
Marshall, A.R.J., Tan, C.H., David, J.P.R., Ng, J.S., Hopkinson, M. 10/2007 In: Optical Materials in Defence Systems Technology IV. Bellingham, Wash. : SPIE-INT SOC OPTICAL ENGINEERING ISBN: 978-0-8194-6898-7.
Conference contribution

Avalanche multiplication in InAlAs
Goh, Y.L., Massey, D.J., Marshall, A.R.J., Ng, J.S., Tan, C.H., Ng, W.K., Rees, G.J., Hopkinson, A., David, J.P.R., Jones, S.K. 01/2007 In: IEEE Transactions on Electron Devices. 54, 1, p. 11-16. 6 p.
Journal article

Excess avalanche noise in In0.52Al0.48As
Goh, Y.L., Marshall, A.R.J., Massey, D.J., Ng, J.S., Tan, C.H., Hopkinson, M., David, J.P.R., Jones, S.K., Button, C.C., Pinches, S.M. 2007 In: IEEE Journal of Quantum Electronics. 43, 5-6, p. 503-507. 5 p.
Journal article

Extremely low excess noise InAlAs avalanche photodiodes
Tan, C.H., Goh, Y.L., Marshall, A.R.J., Tan, L.J.J., Ng, J.S., David, J.P.R. 2007 In: 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings. New York : IEEE p. 81-83. 3 p. ISBN: 978-1-4244-0874-0.
Conference contribution

A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications.
Marshall, A.R.J., Goh, Y.L., Tan, L.J.J., Tan, C.H., Ng, J.S., David, J.P.R. 2006 In: 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2. New York : IEEE p. 789-790. 2 p. ISBN: 978-0-7803-9555-8.
Conference contribution

Excess noise and avalanche multiplication in InAlAs
Goh, Y.L., Massey, D.J., Marshall, A.R.J., Ng, J.S., Tan, C.H., Hopkinson, M., David, J.P.R. 2006 In: 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2. New York : IEEE p. 787-788. 2 p. ISBN: 978-0-7803-9555-8.
Conference contribution