Dr Qiandong Zhuang

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Q. D. Zhuang gained his Ph.D from the Institute of Semiconductors , Chinese Academy of Sciences in 1999 for research into the Molecular Beam Epitaxy (MBE) growth of low-dimensional compound semiconductors and the applications for infrared optoelectronics. Since then he worked at the Singapore Nanyang Technological University as a Research Fellow to investigate InAs/GaAs quantum dots photodetectors and lasers. In 2001, he joined MBE group at the University of Glasgow to exclusively exploit a new class semiconductor of dilute nitride for telecom VCSELs. During the time at the Univesity of Glasgow, he was also responsible for supplying wide range of high quality epitaxial wafers to commercial customers. He joined the Physics Department at Lancaster University in 2003 where he established the MBE Laboratory and has been leading the MBE-related research activities in the group of Semiconductor Physics and Nanostructures.

  • Energy Lancaster
  • Quantum Nanotechnology
  • Quantum Technology Centre