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Yu-Chen Chang

Yu-Chen Chang

Research Student

B52 Physics Building
Lancaster University
United Kingdom

+44 7403 642780

In the optoelectronics group at Lancaster University my research focuses on the use of novel Droplet epitaxy (DE) mode to fabricate semiconductor quantum dots (QDs) GaAs/AlGaAs by molecular beam epitaxy (MBE).  Traditionally, QDs are grown using Stranski-Krastanow mode, however, this is restricted to lattice-mismatched materials, and typically yields QDs suffering from intermixing and strain related effect.

Droplet epitaxy (DE) is a promising growth method to fabricate high-density, strain-free QDs with no limitation on the stacking number or the spacer-layer thickness. By controlling the experimental parameters including flux, temperature, and substrate orientation, high areal density of QDs are formed. In my research, the structure and optical properties of high-density GaAs/AlGaAs quantum dots (QDs) fabricated by DE approach is investigated by using atomic force microscopy (AFM), scanning electron microscopy (SEM), beam exit polishing (BEXP), and photoluminescence 

Yu-Chen Chang's Publications


Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots

Chang, Y-C., Robson, A., Harrison, S., Zhuang, Q. & Hayne, M. 22/06/2015 In : AIP Advances. 5, 6, 6 p.067141

Research output: Contribution to journalJournal article