The Faculty of Science and Technology has created a world-class facility, the Lancaster Quantum Technology Centre (LQTC), which consists of
The LQTC establishes a significant new technology presence in the Northwest.
The Quantum Technology Centre contains state-of-the-art nanofabrication facilities, supported by molecular beam epitaxy reactors for atomic layer-by-layer growth of semiconductor nanostructures and devices. Fabrication techniques available include electron-beam lithography using a dedicated electron-beam writer, plasma processing and thin-film deposition. Electronic structures are measured at temperatures down to 10 mK and below by means of DC, microwave and pulse techniques. Photonic structures are characterized using a variety of specialist (0-17 Tesla) magneto-optics and (4-300 K) spectroscopy techniques, x-ray diffraction, electron microscopy and atomic force microscopy methods.
High-resolution electron beam lithography system with a beam diameter of 2nm. Using 50 KeV fine electron beam, line widths down to 10nm are achievable. The stage is positioned and controlled using laser interferometer which gives the line stitching accuracy of 40nm.
An optical mask aligner using a mercury discharge lamp for exposing patterns in photoresist. Both front and back side alignment can be performed.
Plasma deposition of thin films of SiO2 and Si3N4. The reactive gases used are SiH4, NH3, N2O and N2.
This system uses chlorine base chemistry to etch mainly III-V semiconducting materials. It has both the RIE and ICP sources and a load lock is used to transfer samples. Etching of the multilayers materials can be monitored using a laser interferometer. Etchant gases are BF3, Cl2, CH4, H2, Ar, O2 and SF6.
Used for dry etching of Si, SiO2 and Si3N4. Etchant gases are CHF3, CF4, O2 and Ar.
A four source thermal evaporator for the deposition of thin metallic films.
The electron source incorporates a rotating carousel with six crucible positions for the deposition of thin metallic films. The deposition rate and film thickness are automatically controlled. The system incorporates a custom chamber for the controlled oxidation of deposited films.
This system has a DC and an RF sputtering source. It is used for the thin film deposition of insulating materials and metals - including refractory metals that can be difficult to evaporate.
This annealer uses quartz lamps to rapidly heat samples following a computer controlled temperature profile. Annealing up to 800°C can be done in atmospheres of forming gas, N2, O2 or Ar.
This asher uses an O2 plasma to dry clean surfaces prior to film deposition and to remove photoresist residue.
An ultrasonic wire bonder to attach thin wire (typically 10 to 20 μm diameter) to bond pads on completed structures.
A machine to remove liquid from delicate structures without damage. Used particularly for etching 3D nanostructures and preparing samples for microscopy.
An instrument for maskless optical lithography with resolution as small as 300 nm.
This tool deposits high-quality dielectrics. In our standard configuration it can deposit Al2O3, HfO2 and SiO2.
