Professor Anthony Krier

Professor

Research Interests

  • Narrow gap semiconductors and nanostructures - antimonides and dilute nitrides
  • Mid-infrared (2-5μm) optoelectronic devices - diode lasers, LEDs & photodetectors
  • Molecular beam and Liquid Phase Epitaxial growth - MBE & LPE
  • Solar cells and Thermophotovoltaics

Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE
Kesaria, M., De La Mare, M., Krier, A. 2/11/2016 In: Journal of Physics D: Applied Physics. 49, 43, p. 435107. 4 p.
Journal article

Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells
Carrington, P.J., Montesdeoca Cardenes, D., Fujita, H., James Asirvatham, J.S., Wagener, M., Botha, J.R., Marshall, A.R.J., Krier, A. 23/09/2016 In: Proceedings of SPIE. 9937, 7 p.
Journal article

InSb-based quantum dot nanostructures for mid-infrared photonic devices
Carrington, P.J., Repiso Menendez, E., Lu, Q., Fujita, H., Marshall, A.R.J., Zhuang, Q., Krier, A. 16/09/2016 In: Proceedings of SPIE. 9919
Journal article

Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode
Di Paola, D.M., Kesaria, M., Makarovsky, O., Velichko, A.V., Eaves, L., Mori, N., Krier, A., Patane, A. 18/08/2016 In: Scientific Reports. 6, 8 p.
Journal article

Low bandgap InAs-based thermophotovoltaic cells for heat-electricity conversion
Krier, A., Yin, M., Marshall, A.R.J., Krier, S.E. 06/2016 In: Journal of Electronic Materials. 45, 6, p. 2826-2830. 5 p.
Journal article

Solution processed SnO2:Sb transparent conductive oxide as alternative to Indium Tin Oxide for applications in Organic Light Emitting Diodes
Bin Esro, M., Georgakopoulos, S., Lu, H., Vourlias, G., Krier, A., Milne, W., Gillin, W., Adamopoulos, G. 28/04/2016 In: Journal of Materials Chemistry C. 4, 16, p. 3563-3570. 8 p.
Journal article

The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys
Latkowska, M., Baranowski, M., Linhart, W.M., Janiaka, F., Misiewicz, J., Segercrantz, N., Tuomisto, F., Zhuang, Q., Krier, A., Kudrawiec, R. 11/02/2016 In: Journal of Physics D: Applied Physics. 49, 11, 7 p.
Journal article

Low leakage-current InAsSb nanowire photodetectors on silicon
Thompson, M.D., Alhodaib, A., Craig, A.P., Robson, A.J., Aziz, A., Krier, A., Svensson, J., Wernersson, L., Sanchez, A.M., Marshall, A.R.J. 13/01/2016 In: Nano Letters. 16, 1, p. 182-187. 6 p.
Journal article

Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells
Fernández-Delgado, N., Herrera, M., Molina, S.I., Castro, C., Duguay, S., James, J.S., Krier, A. 30/12/2015 In: Applied Surface Science. 359, 3 p.
Letter

Open-circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration
Fujita, H., Carrington, P.J., Wagener, M.C., Botha, J.R., Marshall, A.R.J., James, J., Krier, A., Lee, K., Ekins-Daukes, N.J. 12/2015 In: Progress in Photovoltaics: Research and Applications. 23, 12, p. 1896-1900. 5 p.
Journal article

Low bandgap mid-infrared thermophotovoltaic arrays based on InAs
Krier, A., Yin, M., Marshall, A., Kesaria, M., Krier, S., McDougall, S., Meredith, W., Johnson, A., Inskip, J., Scholes, A. 11/2015 In: Infrared Physics and Technology. 73, p. 126-129. 4 p.
Journal article

Delta doping and positioning effects of type II GaSb quantum dots in GaAs solar cell
James Asirvatham, J.S., Fujita, H., Fernández-Delgado, N., Herrera, M., Molina, S.I., Marshall, A.R.J., Krier, A. 28/10/2015 In: Materials Research Innovations. 19, 7, p. 512-516. 5 p.
Journal article

Peculiarities of the hydrogenated In(AsN) alloy
Birindelli, S., Kesaria, M., Giubertoni, D., Pettinari, G., Velichko, A., Zhuang, Q., Krier, A., Patane, A., Polimeni, A., Capizzi, M. 14/09/2015 In: Semiconductor Science and Technology. 30, p. 105030. 10 p.
Journal article

InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance
Craig, A., Thompson, M., Tian, Z., Krishna, S., Krier, A., Marshall, A. 24/08/2015 In: Semiconductor Science and Technology. 30, 10, 7 p.
Journal article

Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP
Wheatley, R., Kesaria, M., Mwast, L., Kirch, J., Kuech, T., Marshall, A., Zhuang, Q., Krier, A. 10/06/2015 In: Applied Physics Letters. 106, 4 p.
Journal article

Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer
Hayton, J.P., Marshall, A.R.J., Thompson, M.D., Krier, A. 19/05/2015 In: AIMS Materials Science. 2, 2, p. 86-96. 11 p.
Journal article

Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers
Lu, Q., Zhuang, Q., Krier, A. 15/04/2015 In: Photonics. 2, 2, p. 414-425. 12 p.
Journal article

ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air
Afouxenidis, D., Mazzocco, R., Vourlias, G., Livesley, P., Krier, A., Milne, W., Kolosov, O., Adamopoulos, G. 8/04/2015 In: ACS Applied Materials and Interfaces. 7, 13, p. 7334-7341. 8 p.
Journal article

H-tailored surface conductivity in narrow band gap In(AsN)
Velichko, A.V., Patane, A., Capizzi, M., Sandall, I.C., Giubertoni, D., Makarovsky, O., Polimeni, A., Krier, A., Zhuang, Q., Tan, C.H. 12/01/2015 In: Applied Physics Letters. 106, 2, 4 p.
Journal article

In(AsN) mid-infrared emission enhanced by rapid thermal annealing
Kesaria, M., Birindelli, S., A.V. Velichko, A., Zhuang, Q., Patane, A., Capizzi, M., Krier, A. 01/2015 In: Infrared Physics and Technology. 68, p. 138-142. 5 p.
Journal article

High-mobility Gallium Indium Zinc Oxide-based thin film transistors grown by Spray Pyrolysis in Air
Afouxenidis, D., Kolosov, O., Vourlias, G., Krier, A., Milne, W., Adamopoulos, G. 2015
Poster

Low-voltage ZnO thin-film transistors employing Nd2O3 high-k dielectrics deposited by spray pyrolysis in air
Bin Esro, M., Kolosov, O., Vourlias, G., Krier, A., Milne, W., Adamopoulos, G. 2015
Poster

Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths
Kolosov, O., Dinelli, F., Robson, A., Krier, A., Hayne, M., Falko, V., Henini, M. 2015 In: IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference. Grenoble, France : IEEE p. 43-46. 4 p.
Paper

Solution processed a-LaAlO3 gate dielectrics for their applications in thin film transistors employing metal oxide semiconducting channels
Bin Esro, M., Mazzocco, R., Vourlias, G., Krier, A., Milne, W., Kolosov, O., Adamopoulos, G. 2015
Poster

Photoluminescence studies of individual and few GaSb/GaAs quantum rings
Young, M.P., Woodhead, C.S., Roberts, J., Noori, Y.J., Noble, M.T., Krier, A., Smakman, E.P., Koenraad, P.M., Hayne, M., Young, R.J. 1/11/2014 In: AIP Advances. 4, 11, 6 p.
Journal article

Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels
Velichko, A.V., Makarovsky, O., Mori, N., Eaves, L., Krier, A., Zhuang, Q., Patane, A. 20/08/2014 In: Physical Review B. 90, 7 p.
Journal article

The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy
Anyebe, E., Zhuang, Q., Kesaria, M., Krier, A. 08/2014 In: Semiconductor Science and Technology. 29, 8, 7 p.
Journal article

Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings
Wagener, M.C., Carrington, P.J., Botha, J.R., Krier, A. 28/07/2014 In: Journal of Applied Physics. 116, 4, 6 p.
Journal article

InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers
Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R., Krier, A. 12/05/2014 In: Semiconductor Science and Technology. 29, 7, 8 p.
Journal article

Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitation
James Asirvatham, J., Fujita, H., Carrington, P., Marshall, A., Krier, A. 04/2014 In: IET Optoelectronics. 8, 2, p. 76-80. 5 p.
Journal article

Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices
Garduno-Nolasco, E., Carrington, P.J., Krier, A., Missous, M. 04/2014 In: IET Optoelectronics. 8, 2, p. 71-75. 5 p.
Journal article

Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells
Fujita, H., James Asirvatham, J., Carrington, P., Marshall, A., Krier, A., Wagener, M.C., Botha, J.R. 03/2014 In: Semiconductor Science and Technology. 29, 3, 5 p.
Journal article

Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells
Wagener, M.C., Carrington, P.J., Botha, J.R., Krier, A. 7/01/2014 In: Journal of Applied Physics. 115, 1, 3 p.
Journal article

Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers
Lu, Q., Zhuang, Q., Hayton, J., Yin, M., Krier, A. 2014 In: Applied Physics Letters. 105, 3, 3 p.
Journal article

Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays
Craig, A., Marshall, A., Tian, Z., Krishna, S., Krier, A. 16/12/2013 In: Applied Physics Letters. 103, 4 p.
Journal article

Antimonide quantum dot nanostructures for novel photonic device applications
Krier, A., Carrington, P., Zhuang, Q., Young, R., Hayne, M., Lu, Q., James Asirvatham, J., Wagener, M., Botha, J., Koenraad, P., Smakman, E.P. 5/11/2013 In: The wonder of nanotechnology. SPIE
Chapter (peer-reviewed)

Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells
Wagener, M.C., Carrington, P.J., Botha, J.R., Krier, A. 6/08/2013 In: Applied Physics Letters. 103, 6, 4 p.
Journal article

Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks
Mahajumi, A.S., Carrington, P., Kostakis, I., Missous, M., Sanchez, A., Zhuang, Q., Young, R., Hayne, M., Krier, A. 31/07/2013 In: Journal of Physics D: Applied Physics. 46, 30, 6 p.
Journal article

Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings
Carrington, P.J., Young, R.J., Hodgson, P.D., Sanchez, A.M., Hayne, M., Krier, A. 03/2013 In: Crystal Growth and Design. 13, 3, p. 1226-1230. 5 p.
Journal article

InAs-based dilute nitride materials and devices for the mid-infrared spectral range
Krier, A., De La Mare, M., Zhuang, Q., Carrington, P.J., Patane, A. 4/02/2013 In: Proceedings of SPIE. 8631
Journal article

Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells
Carrington, P.J., Wagener, M.C., Botha, J.R., Sanchez, A.M., Krier, A. 3/12/2012 In: Applied Physics Letters. 101, 23, 5 p.
Journal article

Effects of substrate pm M comtent on the growth of the mid-infrared dilute nitride InAsN alloy
De La Mare, M., Zhuang, Q., Krier, A., Patane, A. 3/10/2012 In: Journal of Physics D: Applied Physics. 45, 39, p. 395103-395105. 3 p.
Journal article

Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor
Kozlova, N.V., Mori, N., Makarovsky, O., Eaves, L., Zhuang, Q., Krier, A., Patane, A. 2/10/2012 In: Nature Communications. 3, 5 p.
Journal article

Development of dilute nitride materials for mid-infrared diode lasers
Krier, A., de la Mare, M., Carrington, P.J., Thompson, M., Zhuang, Q., Patane, A., Kudrawiec, R. 09/2012 In: Semiconductor Science and Technology. 27, 9, 8 p.
Journal article

Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells
Carrington, P.J., Mahajumi, A.S., Wagener, M.C., Botha, J.R., Zhuang, Q., Krier, A. 15/05/2012 In: Physica B: Condensed Matter. 407, 10, p. 1493-1496. 4 p.
Journal article

Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy
Das, S.K., Das, T.D., Dhar, S., de la Mare, M., Krier, A. 01/2012 In: Infrared Physics and Technology. 55, 1, p. 156-160. 5 p.
Journal article

Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb
Cheetham, K.J., Carrington, P.J., Krier, A., Patel, I.I., Martin, F.L. 01/2012 In: Semiconductor Science and Technology. 27, 1, p. -. 4 p.
Journal article

Seeing the invisible - ultrasonic force microscopy for true subsurface elastic imaging of semiconductor nanostructures with nanoscale resolution
Kolosov, O., Dinelli, F., Henini, M., Krier, A., Hayne, M., Pingue, P. 2012 In: NSTI-Nanotech 2012. Santa Clara, USA : CRC PRESS-TAYLOR & FRANCIS GROUP p. 24-26. 3 p.
Paper

Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes
Cheetham, K.J., Krier, A., Marko, I.P., Aldukhayel, A., Sweeney, S.J. 3/10/2011 In: Applied Physics Letters. 99, 14, p. -. 3 p.
Journal article

N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy
de la Mare, M., Das, S.C., Das, T.D., Dhar, S., Krier, A. 10/08/2011 In: Journal of Physics D: Applied Physics. 44, 31, p. -. 7 p.
Journal article

Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.
Drachenko, O., Patane, A., Kozlova, N.V., Zhuang, Q., Krier, A., Eaves, L., Helm, M., EU Contract No. RII3-CT-2004-506239 (Funder), DFG Grant Nos. DR832/3-1 (Funder), DFG KO 3743/1-1 (Funder), AOBJ: 550341 (Funder) 04/2011 In: Applied Physics Letters. 98, 16, p. 162109.
Journal article

Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE.
Cheetham, K.J., Krier, A., Patel, I.I., Martin, F.L., Tzeng, J., Wu, C., Lin, H., EPSRC Studentship for KJC (Funder) 2/03/2011 In: Journal of Physics D: Applied Physics. 44, 8, p. 085405.
Journal article

Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes
Cheetham, K.J., Carrington, P.J., Cook, N.B., Krier, A. 02/2011 In: Solar Energy Materials and Solar Cells. 95, 2, p. 534-537. 4 p.
Journal article

MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices
de la Mare, M., Krier, A., Zhuang, Q., Carrington, P., Patane, A. 2011 In: Proceedings of SPIE. 7945, 79450L
Journal article

Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes
Carrington, P., de la Mare, M., Cheetham, K.J., Zhuang, Q., Krier, A. 2011 In: Advances in OptoElectronics. 2011, n/a, 8 p.
Journal article

Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys
Kudrawiec, R., Latkowska, M., Misiewicz, J., Zhuang, Q., Godenir, A.M.R., Krier, A. 2011 In: Applied Physics Letters. 99, 1, 3 p.
Journal article

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy.
Ibanez, J., Oliva, R., de la Mare, M., Schmidbauer, M., Hernandez, S., Pellegrino, P., Scurr, D.J., Cusco, R., Artus, L., Shafi, M., Mari, R.H., Henini, M., Zhuang, Q., Godenir, A.M.R., Krier, A., Spanish Ministry of Education and Science Project No. MAT2007-63617 (Funder), EPRSC (UK) (Funder) 11/2010 In: Journal of Applied Physics. 108, 10, p. 103504.
Journal article

Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range.
de la Mare, M., Carrington, P.J., Wheatley, R., Zhuang, Q., Beanland, R., Sanchez, A.M., Krier, A., EPSRC Studentship for MDLM (Funder) 1/09/2010 In: Journal of Physics D: Applied Physics. 43, 34, p. 345103.
Journal article

Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy.
Makarovsky, O., Feu, W.H.M., Patane, A., Eaves, L., Zhuang, Q.D., Krier, A., Beanland, R., Airey, R. 1/02/2010 In: Applied Physics Letters. 96, 5, p. 052115.
Journal article

Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth.
Chen, R., Phann, S., Sun, H.D., Zhuang, Q., Godenir, A.M.R., Krier, A. 28/12/2009 In: Applied Physics Letters. 95, 26, p. 261905.
Journal article

Molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN:Sb for mid-infrared applications.
Zhuang, Q., Krier, A. 15/12/2009 In: IET Optoelectronics. 3, 6, p. 248-258. 11 p.
Journal article

Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx.
Patane, A., Feu, W.H.M., Makarovsky, O., Drachenko, O., Eaves, L., Krier, A., Zhuang, Q.D., Helm, M., Goiran, M., Hill, G. 16/09/2009 In: Physical Review B. 80, 11, p. 115207.
Journal article

Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.
de la Mare, M., Zhuang, Q., Krier, A., Patane, A., Dhar, S. 22/07/2009 In: Applied Physics Letters. 95, 3, p. 031110.
Journal article

Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.
Cook, N.B., Krier, A. 13/07/2009 In: Applied Physics Letters. 95, 2, p. 021110.
Journal article

Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.
Carrington, P.J., Zhuang, Q., Yin, M., Krier, A. 07/2009 In: Semiconductor Science and Technology. 24, 7, p. 075001.
Journal article

Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys.
Kudrawiec, R., Misiewicz, J., Zhuang, Q., Godenir, A.M.R., Krier, A. 14/04/2009 In: Applied Physics Letters. 94, 15, p. 151902.
Journal article

Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K.
Nash, G.R., Przeslak, S.J.B., Smith, S.J., de Valicourt, G., Andreev, A.D., Carrington, P.J., Yin, M., Krier, A., Coomber, S.D., Buckle, L., Emeny, M.T., Ashley, T. 5/03/2009 In: Applied Physics Letters. 94, 9, p. 091111.
Journal article

InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications
Carrington, P.J., Solov'ev, V.A., Zhuang, Q., Vanov, S.V., Krier, A. 03/2009 In: Microelectronics Journal. 40, 3, p. 469-472. 4 p.
Journal article

Magnetoresistance and electron mobility in dilute nitride InAsN alloys
Zhuang, Q., Feu, W.H.M., Patane, A., Makarovsky, O., Allison, G., Eaves, L., De La Mare, M., Krier, A., Hill, G. 2009 In: AIP Conference Proceedings. 1288
Journal article

Mid-infrared GaInSb/AlGaInSb quantum well laser diodes
Nash, G.R., Przeslak, S.J.B., Smith, S.J., de Valicourt, G., Andreev, A.D., Carrington, P.J., Yin, M., Krier, A., Coomber, S.D., Buckle, L., Emeny, M.T., Ashley, T. 2009 In: Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on . New York : IEEE p. 2813-2814. 2 p.
Paper

Electron coherence length and mobility in highly mismatched III-N-V alloys.
Patane, A., Allison, G., Eaves, L., Kozlova, N.V., Zhuang, Q.D., Krier, A., Hopkinson, M., Hill, G. 23/12/2008 In: Applied Physics Letters. 93, 25, p. 252106.
Journal article

Growth optimization of self-organized InSb/InAs quantum dots.
Zhuang, Q., Carrington, P.J., Krier, A. 13/11/2008 In: Journal of Physics D: Applied Physics. 41, 23, 4 p.
Journal article

Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance
Cripps, S.A., Hosea, T.J.C., Krier, A., Smirnov, V., Batty, P.J., Zhuang, Q.D., Lin, H.H., Liu, P.W., Tsai, G. 30/09/2008 In: Thin Solid Films. 516, 22, p. 8049-8058. 10 p.
Journal article

GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.
Yin, M., Nash, G.R., Coomber, S.D., Buckle, L., Carrington, P.J., Krier, A., Andreev, A., Przeslak, S.J.B., de Valicourt, G., Smith, S.J., Emeny, M.T., Ashley, T. 23/09/2008 In: Applied Physics Letters. 93, 12, p. 121106.
Journal article

Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics
Zhuang, Q., Godenir, A., Krier, A., Tsai, G., Lin, H.H. 22/09/2008 In: Applied Physics Letters. 93, 12, p. 121903.
Journal article

Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.
Carrington, P.J., Solov'ev, V.A., Zhuang, Q., Krier, A., Ivanov, S.V. 1/09/2008 In: Applied Physics Letters. 93, 9, p. 091101.
Journal article

Properties of dilute InAsN layers grown by liquid phase epitaxy.
Dhar, S., Das, T.D., de la Mare, M., Krier, A. 22/08/2008 In: Applied Physics Letters. 93, 7, p. 071905.
Journal article

Photoluminescence in InAsN epilayers grown by molecular beam epitaxy
Zhuang, Q., Godenir, A., Krier, A. 10/06/2008 In: Journal of Physics D: Applied Physics. 41, 13, p. 132002.
Journal article

Room temperature photoluminescence at 4.5 mu m from InAsN
Zhuang, Q., Godenir, A.M.R., Krier, A., Lai, K.T., Haywood, S.K. 26/03/2008 In: Journal of Applied Physics. 103, 6, p. 063520.
Journal article

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes
Carrington, P., Solov'ev, V.A., Zhuang, Q., Ivanov, S.V., Krier, A. 1/02/2008 In: Proceedings of SPIE. 6900
Journal article

The development of room temperature LEDs and lasers for the mid-infrared spectral range.
Krier, A., Yin, M., Smirnov, V., Batty, P.J., Carrington, P., Solovev, V., Sherstnev, V. 01/2008 In: physica status solidi (a). 205, 1, p. 129-143. 15 p.
Journal article

Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE
Yin, M., Krier, A., Carrington, P.J., Jones, R., Krier, S.E. 2008 In: NARROW GAP SEMICONDUCTORS 2007. DORDRECHT : Springer p. 69-72. 4 p. ISBN: 978-1-4020-8424-9.
Conference contribution

Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE.
Yin, M., Krier, A., Carrington, P.J., Jones, R., Krier, S.E. 2008 In: Narrow Gap Semiconductors 2007 : Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Bristol : Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol p. 69-72. 4 p. ISBN: 978-1-4020-8424-9.
Chapter

Electroluminescence from InSb-based mid-infrared quantum well lasers.
Smith, S.J., Przeslak, S.J.B., Nash, G.R., Storey, C.J., Andreev, A.D., Krier, A., Yin, M., Coomber, S.D., Buckle, L., Emeny, M.T., Ashley, T. 2008 In: Narrow Gap Semiconductors 2007 : Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Bristol : Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol p. 159-161. 3 p. ISBN: 978-1-4020-8424-9.
Chapter

Growth of InAsSb quantum wells by liquid phase epitaxy.
Yin, M., Krier, A., Jones, R. 2008 In: Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Bristol : Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol p. 65-68. 4 p. ISBN: 978-1-4020-8424-9.
Chapter

InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes
Solov'ev, V.A., Carrington, P., Zhuang, Q., Lai, K.T., Haywood, S.K., Ivanov, S.V., Krier, A. 2008 In: NARROW GAP SEMICONDUCTORS 2007. DORDRECHT : Springer p. 129-131. 3 p. ISBN: 978-1-4020-8424-9.
Conference contribution

InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes.
Solov'ev, V.A., Carrington, P., Zhuang, Q., Lai, K.T., Haywood, S.K., Ivanov, S.V., Krier, A. 2008 In: Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Bristol : Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol p. 129-131. 3 p. ISBN: 978-1-4020-8424-9.
Chapter

Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. .
Nash, G.R., Smith, S.J., Coomber, S.D., Przeslak, S., Andreev, A., Carrington, P., Yin, M., Krier, A., Buckle, L., Emeny, M.T., Ashley, T. 24/09/2007 In: Applied Physics Letters. 91, 13, p. 131118.
Journal article

Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy. .
Yin, M., Krier, A., Jones, R., Carrington, P. 3/09/2007 In: Applied Physics Letters. 91, 10
Journal article

Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy. .
Krier, A., Smirnov, V.M., Batty, P.J., Yin, M., Lai, K.T., Rybchenko, S., Haywood, S.K., Vasil'ev, V.I., Gagis, G.S., Kuchinskii, V.I. 20/08/2007 In: Applied Physics Letters. 91, 8, p. 082102.
Journal article

Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. .
Krier, A., Stone, M., Krier, S.E. 06/2007 In: Semiconductor Science and Technology. 22, 6, p. 624-628. 5 p.
Journal article

Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes. .
Krier, A., Smirnov, V.M., Batty, P.J., Vasil'ev, V.I., Gagis, G.S., Kuchinskii, V.I. 21/05/2007 In: Applied Physics Letters. 90, 21, p. 211115.
Journal article

Strain enhancement during annealing of GaAsN alloys.
Zhuang, Q.D., Krier, A., Stanley, C.R. 15/05/2007 In: Journal of Applied Physics. 101, 10, p. 103536.
Journal article

Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy. .
Cripps, S.A., Hosea, T.J.C., Krier, A., Smirnov, V., Batty, P.J., Zhuang, Q.D., Lin, H.H., Liu, P.W., Tsai, G. 24/04/2007 In: Applied Physics Letters. 92, 17, p. 172106.
Journal article

GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes
Smirnov, V.M., Batty, P.J., Jones, R., Krier, A., Vasil'ev, V.I., Gagis, G.S., Kuchinskii, V.I. 04/2007 In: physica status solidi (a). 204, 4, p. 1047-1050. 4 p.
Journal article

Physical working principles of semiconductor disk lasers. .
Averkiev, N.S., Sherstnev, V.V., Monakhov, A.M., Grebenshikova, E.A., Kislyakova, A.Y., Yakovlev, Y.P., Krier, A., Wright, D.A. 02/2007 In: Low Temperature Physics. 33, 2-3, p. 283-290. 8 p.
Journal article

Mode behavior in InAs midinfrared whispering gallery lasers.
Norris, G., Krier, A., Sherstnev, V.V., Monakhov, A., Baranov, A. 1/01/2007 In: Applied Physics Letters. 90, 1, p. 011105.
Journal article

FDTD modelling of mid infrared disk lasers
Pugh, J.R., Buss, I.J., Nash, G.R., AshleY, T., Krier, A., Cryan, M.J., Rarity, J.G. 2007 In: ICTON 2007: Proceedings of the 9th International Conference on Transparent Optical Networks, Vol 4. New York : IEEE p. 208-211. 4 p.
Paper

Mid-infrared InAsSbP/InAsSb quantum well laser diodes - art. no. 673808
Yin, M., Krier, A. 2007 In: TECHNOLOGIES FOR OPTICAL COUNTERMEASURES IV. BELLINGHAM : SPIE-INT SOC OPTICAL ENGINEERING p. 73808-73808. 9 p. ISBN: 978-0-8194-6896-3.
Conference contribution

Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918
Smirnov, V.M., Batty, P.J., Krier, A., Jones, R. 2007 In: Quantum Sensing and Nanophotonic Devices IV. BELLINGHAM : SPIE-INT SOC OPTICAL ENGINEERING p. 47918-47918. 8 p.
Paper

Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. .
Liu, P.W., Tsai, G., Lin, H.H., Krier, A., Zhuang, Q.D., Stone, M, M. 13/11/2006 In: Applied Physics Letters. 89, 20, p. 201115.
Journal article

Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. .
Krier, A., Stone, M., Zhuang, Q.D., Liu, P.W., Tsai, G., Lin, H.H. 28/08/2006 In: Applied Physics Letters. 89, 9, p. 091110.
Journal article

Uncooled photodetectors for the 3-5 mu m spectral range based on III-V heterojunctions. .
Krier, A., Suleiman, W. 21/08/2006 In: Applied Physics Letters. 89, 8, p. 083512.
Journal article

Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. .
Krier, A., Huang, X.L. 21/01/2006 In: Journal of Physics D: Applied Physics. 39, 2, p. 255-261. 7 p.
Journal article

Development of 3.7 mu m InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy - art. no. 639707
Yin, M., Krier, A., Jones, R., Krier, S., Campbell, D. 2006 In: Technologies for Optical Countermeasures III. BELLINGHAM : SPIE-INT SOC OPTICAL ENGINEERING p. 39707-39707. 6 p. ISBN: 978-0-8194-6495-8.
Conference contribution

Mid-infrared diode lasers for free space optical communications
Yin, M., Krier, A., Krier, S., Jones, R., Carrington, P. 2006 In: Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components Architectures for Microwave Systems and Displays. BELLINGHAM : SPIE-INT SOC OPTICAL ENGINEERING p. U101-U106. 6 p. ISBN: 978-0-8194-6497-2.
Conference contribution

Semiconductor WGM lasers for the mid-IR spectral range
Sherstnev, V.V., Monakhov, A.M., Astakhova, A.P., Kislyakova, A.Y., Yakovlev, Y.P., Averkiev, N.S., Krier, A., Hill, G. 09/2005 In: Semiconductors. 39, 9, p. 1087-1092. 6 p.
Journal article

Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. .
Krier, A., Huang, X.L. 7/02/2005 In: Applied Physics Letters. 86, 6, p. 061113.
Journal article

InAs whispering gallery mode lasers for the mid-infrared spectral range. .
Sherstnev, V., Monakhov, A., Krier, A., Wright, D.A. 02/2005 In: IEE Proceedings - Optoelectronics. 152, 1, p. 1-5. 5 p.
Journal article

Fundamental physics and practical realisation of mid-infrared photodetectors.
Krier, A., Chakrabarti, P., Gao, H., Mao, Y., Huang, X., Sherstnev, V.V. 10/2004 In: Proceedings of SPIE. 5564, p. 92-104. 13 p.
Journal article

Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. .
Moiseev, K.D., Krier, A., Yakovlev, Y.P. 08/2004 In: Journal of Electronic Materials. 33, 8, p. 867-872. 6 p.
Journal article

Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. .
Chakrabarti, P., Krier, A., Huang, X.L., Fenge, P. 5/05/2004 In: IEEE Electron Device Letters. 25, 5, p. 283-285. 3 p.
Journal article

The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. .
Monakhov, A., Krier, A., Sherstnev, V.V. 03/2004 In: Semiconductor Science and Technology. 19, 3, p. 480-484. 5 p.
Journal article

Structural modifications of InAs based materials for mid-infrared optoelectronic devices
Nohavica, D., Krier, A. 2004 In: ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems. New York : IEEE p. 203-206. 4 p.
Paper

Analysis and simulation of a mid-infrared P+-InAs0.55Sb0.15P0.30/n(0)-InAs0.89Sb0.11/N+-InAs0.55Sb0.15P0.30 double heterojunction photodetector grown by LPE. .
Chakrabarti, P., Krier, A., Morgan, A.F. 1/10/2003 In: IEEE Transactions on Electron Devices. 50, 10, p. 2049-2058. 10 p.
Journal article

Double-heterojunction photodetector for midinfrared applications: theoretical model and experimental results.
Chakrabarti, P., Krier, A., Morgan, A.F. 1/09/2003 In: Optical Engineering. 42, 9, p. 2614-2623. 10 p.
Journal article

Mid-infrared whispering gallery mode ring lasers and LEDs. .
Wright, D.A., Sherstnev, V.V., Krier, A., Monakhov, A.M., Hill, G. 08/2003 In: IEE Proceedings - Optoelectronics. 150, 4, p. 314-317. 4 p.
Journal article

The influence of melt purification and structure defects on mid-infrared light emitting diodes. .
Krier, A., Sherstnev, V.V. 7/07/2003 In: Journal of Physics D: Applied Physics. 36, 13, p. 1484-1488. 5 p.
Journal article

Mid-infrared ring laser. .
Krier, A., Sherstnev, V.V., Wright, D., Monakhov, A.M., Hill, G. 12/06/2003 In: Electronics Letters. 39, 12, p. 916-917. 2 p.
Journal article

Mid-infrared lasing induced by noise.
Sherstnev, V.V., Krier, A., Balanov, A.G., Janson, N.B., Silchenko, A.N., McClintock, P.V.E. 03/2003 In: Fluctuation and Noise Letters. 3, 1, p. L91-L95. 5 p.
Journal article

High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. .
Choulis, S.A., Andreev, A., Merrick, M., Adams, A.R., Murdin, B.N., Krier, A., Sherstnev, V.V. 24/02/2003 In: Applied Physics Letters. 82, 8, p. 1149-1151. 3 p.
Journal article

The effect of pressure on the radiative efficiency of InAs based light emitting diodes. .
Choulis, S.A., Andreev, A., Merrick, M., Jin, S., Clarke, D.G., Murdin, B.N., Adams, A.R., Krier, A., Sherstnev, V.V. 1/02/2003 In: physica status solidi (b). 235, 2, p. 312-316. 5 p.
Journal article

Interface luminescence and lasing at a type II single broken-gap heterojunction
Moiseev, K.D., Mikhailova, M.P., Yakovlev, Y.P., Krier, A. 2003 In: 10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY. Bellingham, Wash. : SPIE-INT SOC OPTICAL ENGINEERING p. 340-342. 3 p.
Paper

Mid-infrared whispering gallery lasers
Wright, D.A., Krier, A., Sherstnev, V.V., Monakhov, A. 2003 In: 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2. NEW YORK : IEEE p. 280-280. 1 p.
Paper

Optical and electrical characterisation of an p(+)-InAs0.96Sb0.04/n(0)-InAs0.96Sb0.04/n(+)-InAs photodetector for mid-infrared application
Chakrabarti, P., Krier, A., Huang, X.L., Fenge, P., Lal, R.K. 2003 In: PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II. NEW YORK : IEEE p. 87-92. 6 p.
Paper

Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. .
Huang, X.L., Labadi, Z., Hammiche, A., Krier, A. 7/12/2002 In: Journal of Physics D: Applied Physics. 35, 23, p. 3091-3095. 5 p.
Journal article

Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. .
Krier, A., Huang, X.L. 11/2002 In: Physica E: Low-dimensional Systems and Nanostructures. 15, 3, p. 159-163. 5 p.
Journal article

Tuning characteristics of InAsSb continuous-wave lasers. .
Sherstnev, V., Krier, A., Popov, A., Werle, P. 20/05/2002 In: Applied Physics Letters. 80, 20, p. 3676-3678. 3 p.
Journal article

Optical switching in midinfrared light-emitting diodes .
Krier, A., Sherstnev, V.V., Gao, H.H., Monakhov, A.M., Hill, G. 22/04/2002 In: Applied Physics Letters. 80, 16, p. 2821-2823. 3 p.
Journal article

Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction.
Moiseev, K.D., Krier, A., Mikhailova, M.P., Yakovlev, Y.P. 7/04/2002 In: Journal of Physics D: Applied Physics. 35, 7, p. 631-636. 6 p.
Journal article

High tunability and superluminescence in InAs mid-infrared light emitting diodes. .
Sherstnev, V.V., Krier, A., Hill, G. 7/02/2002 In: Journal of Physics D: Applied Physics. 35, 3, p. 196-198. 3 p.
Journal article

General theory of multi-phase melt crystallization. .
Charykov, N.A., Sherstnev, V.V., Krier, A. 02/2002 In: Journal of Crystal Growth. 234, 4, p. 762-772. 11 p.
Journal article

Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy
Krier, A., Huang, X.L. 2002 In: Physics and Simulation of Optoelectronic Devices X. Bellingham, Wash. : SPIE-INT SOC OPTICAL ENGINEERING p. 70-78. 9 p.
Paper

Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures. .
Moiseev, K.D., Krier, A., Yakovlev, Y.P. 15/10/2001 In: Journal of Applied Physics. 90, 8, p. 3988-3992. 5 p.
Journal article

Liquid phase epitaxial growth and morphology of InSb quantum dots. .
Krier, A., Huang, X.L., Hammiche, A. 21/03/2001 In: Journal of Physics D: Applied Physics. 34, 6, p. 874-878. 5 p.
Journal article

Physics and technology of mid-infrared light emitting diodes. .
Krier, A. 15/03/2001 In: Philosophical Transactions A: Mathematical, Physical and Engineering Sciences . 359, 1780, p. 599-618. 20 p.
Journal article

LEDs for formaldehyde detection at 3.6 mu m. .
Krier, A., Sherstnev, V.V. 7/02/2001 In: Journal of Physics D: Applied Physics. 34, 3, p. 428-432. 5 p.
Journal article

Investigation on InGaAs/InAlAs quantum cascade lasers.
Zhang, Q.S., Liu, F.Q., Zhang, Y.Z., Wang, Z.G., Gao, H.H., Krier, A. 2001 In: Journal of Infrared and Millimeter Waves. 20, 1, p. 41-43. 3 p.
Journal article

Mid-infrared lasers operating on a single quantum well at the type II heterointerface
Moiseev, K.D., Mikhailova, M.P., Yakovlev, Y.P., Krier, A. 2001 In: LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS. New York : IEEE p. 534-535. 2 p.
Paper

Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .
Krier, A., Sherstnev, V.V., Labadi, Z., Krier, S.E., Gao, H.H. 21/12/2000 In: Journal of Physics D: Applied Physics. 33, 24, p. 3156-3160. 5 p.
Journal article

Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection. .
Sherstnev, V.V., Monahov, A.M., Krier, A., Hill, G. 11/12/2000 In: Applied Physics Letters. 77, 24, p. 3908-3910. 3 p.
Journal article

Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. .
Krier, A., Huang, X.L., Hammiche, A. 4/12/2000 In: Applied Physics Letters. 77, 23, p. 3791-3793. 3 p.
Journal article

Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. .
Arivuoli, D., Lawson, N.S., Krier, A., Attolini, G., Pelosi, C. 16/10/2000 In: Materials Chemistry and Physics. 66, 2 - 3, p. 207-212. 6 p.
Journal article

Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .
Krier, A., Krier, S.E., Labadi, Z. 09/2000 In: Applied Physics A. 71, 3, p. 249-253. 5 p.
Journal article

Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. .
Gao, H.H., Krier, A., Sherstnev, V.V. 7/08/2000 In: Applied Physics Letters. 77, 6, p. 872-874. 3 p.
Journal article

A novel LED module for the detection of H2S at 3.8 mu m. .
Krier, A., Sherstnev, V.V., Gao, H.H. 21/07/2000 In: Journal of Physics D: Applied Physics. 33, 14, p. 1656-1661. 6 p.
Journal article

Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. .
Krier, A., Gao, H.H., Sherstnev, V.V. 06/2000 In: IEE Proceedings - Optoelectronics. 147, 3, p. 217-221. 5 p.
Journal article

Modelling of InAs thin layer growth from the liquid phase. .
Krier, A., Labadi, Z. 06/2000 In: IEE Proceedings - Optoelectronics. 147, 3, p. 222-224. 3 p.
Journal article

Powerful interface light emitting diodes for methane gas detection. .
Krier, A., Sherstnev, V.V. 21/01/2000 In: Journal of Physics D: Applied Physics. 33, 2, p. 101-106. 6 p.
Journal article

High power 4.6 mu m light emitting diodes for CO detection. .
Krier, A., Gao, H.H., Sherstnev, V.V., Yakovlev, Y. 21/12/1999 In: Journal of Physics D: Applied Physics. 32, 24, p. 3117-3121. 5 p.
Journal article

InAsSbP quantum dots grown by liquid phase epitaxy
Krier, A., Labadi, Z., Hammiche, A. 21/10/1999 In: Journal of Physics D: Applied Physics. 32, 20, p. 2587-2589. 3 p.
Journal article

InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature
Gao, H.H., Krier, A., Sherstnev, V., Yakovlev, Y. 7/08/1999 In: Journal of Physics D: Applied Physics. 32, 15, p. 1768-1772. 5 p.
Journal article

Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering
Krier, A., Gao, H.H., Sherstnev, V.V. 15/06/1999 In: Journal of Applied Physics. 85, 12, p. 8419-8422. 4 p.
Journal article

Synthesis, characterisation and study of photoluminescent properties of head to tail poly(3-pentoxythiophene), poly(3-cyclohexylthiophene) and mixed alkoxy cyclohexyl 3-substituted polythiophenes
Iraqi, A., Clark, D., Jones, R., Krier, A. 06/1999 In: Synthetic Metals. 102, 1-3, p. 1220-1221. 2 p.
Journal article

High quality InAs grown by liquid phase epitaxy using gadolinium gettering
Gao, H.H., Krier, A., Sherstnev, V.V. 05/1999 In: Semiconductor Science and Technology. 14, 5, p. 441-445. 5 p.
Journal article

Conductivity mechanisms in poly(p-phenylene vinylene) light-emitting diodes at high and low bias
Jones, R., Krier, A., Davidson, K., Schmit, J.P.N., Zawadzka, J. 26/02/1999 In: Thin Solid Films. 340, 1-2, p. 221-229. 9 p.
Journal article

Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer
Krier, A., Chubb, D., Krier, S.E., Hopkinson, M., Hill, G. 10/1998 In: IEE Proceedings - Optoelectronics. 145, 5, p. 292-296. 5 p.
Journal article

Rapid slider LPE growth of InAs quantum wells
Krier, A., Labadi, Z., Richardson, J. 10/1998 In: IEE Proceedings - Optoelectronics. 145, 5, p. 297-301. 5 p.
Journal article