Abstract: Solid state light sources such as III-V based type-II embedded quantum dots (QDs), and defects in 2D materials, are both promising nanostructures for the generation of single photons. However, both have issues with their light output. Type-II QD's have a poor efficiency due to low radiative recombination rates, difficulties with silicon integration, and a low extraction efficiency. Whereas 2D materials suffer from being highly sensitive to their ambient environment. Improving the light output of these materials, could be a stepping stone for their use as single photon sources.

In this talk I will discuss several simple strategies that can be used to improve the light emission of type-II QD's and other QD-like emitting nanostructures. I will start by showing how to isolate and observe the properties of individual excitons in type-II emitting GaSb/GaAs quantum rings. The methods from this work are then used to see if individual excitons from telecom-wavelength emitting quantum dots can be observed, when grown on a silicon substrate; an important step towards the integration of single photon sources with silicon optoelectronics. Finally, solid immersion lenses formed from a UV-curable epoxy are explored as a method for increasing light output of several different solid-state structures including 2D materials. This method could prove to be a useful technique for increasing the light output of 2D material based LED's, especially WSe2 based single photon sources.

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