The development of van der Waals (vdW) heterostructures made by stacking two dimensional (2D) crystals has led to the discovery of new phenomena and the realization of 2D functional devices ranging from sensitive phototransistors to tunnel diodes. The electronic properties of these devices can be modified not only by careful selection of the materials within the stack, but also by adjusting the built-in strain and relative orientation of the component crystalline layers. Among these vdW crystals, the metal chalcogenide InSe compound represents a new exfoliable and stable semiconductor that expands the current library of vdW crystals. Our recent demonstration of FETs with electron mobility higher than in Si-FETs, and the observation of ``giant'' quantum Hall plateau and fast broad-band photodiodes has revealed the great potential of these materials. In this talk I will review the research at Nottingham on this new class of 2D layered compounds. From the growth and fabrication of vdW heterostructures to the demonstration of prototype devices, I will discuss how these layers can provide a platform for scientific investigations and new routes to 2D electronics and optoelectronics.

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