Dr Qiandong Zhuang

Senior Lecturer

Profile

Q. D. Zhuang gained his Ph.D from the Institute of Semiconductors , Chinese Academy of Sciences in 1999 for research into the Molecular Beam Epitaxy (MBE) growth of low-dimensional compound semiconductors and the applications for infrared optoelectronics. Since then he worked at the Singapore Nanyang Technological University as a Research Fellow to investigate InAs/GaAs quantum dots photodetectors and lasers. In 2001, he joined MBE group at the University of Glasgow to exclusively exploit a new class semiconductor of dilute nitride for telecom VCSELs. During the time at the Univesity of Glasgow, he was also responsible for supplying wide range of high quality epitaxial wafers to commercial customers. He joined the Physics Department at Lancaster University in 2003 where he established the MBE Laboratory and has been leading the MBE-related research activities in the group of Semiconductor Physics and Nanostructures.

Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
Fernández-Delgado, N., Herrera, M., Chisholm, M.F., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M., Molina, S.I. 15/02/2017 In: Applied Surface Science. 395, p. 136-139. 4 p.
Journal article

Quantum phase transitions in Sn bilayer based interfacial systems by an external strain
Li, C., Zhuang, Q., Chen, Y., Shi, C., Wang, D. 21/09/2016 In: Physical Chemistry Chemical Physics. 2016, 35, p. 24350-24355. 6 p.
Journal article

InSb-based quantum dot nanostructures for mid-infrared photonic devices
Carrington, P.J., Repiso Menendez, E., Lu, Q., Fujita, H., Marshall, A.R.J., Zhuang, Q., Krier, A. 16/09/2016 In: Proceedings of SPIE. 9919
Journal article

Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots
Fernández-Delgado, N., Herrera, M., Chisholm, M.F., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M., Molina, S.I. 08/2016 In: Journal of Materials Science. 51, 16, p. 7691-7698. 8 p.
Journal article

An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots
Qiu, F., Qiu, W., Li, Y., Wang, X., Zhang, Y., Zhou, X., Lv, Y., Sun, Y., Deng, H., Hu, S., Dai, N., Wang, C., Yang, Y., Zhuang, Q., Hayne, M., Krier, A. 12/02/2016 In: Nanotechnology. 27, 6, 6 p.
Journal article

The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys
Latkowska, M., Baranowski, M., Linhart, W.M., Janiaka, F., Misiewicz, J., Segercrantz, N., Tuomisto, F., Zhuang, Q., Krier, A., Kudrawiec, R. 11/02/2016 In: Journal of Physics D: Applied Physics. 49, 11, 7 p.
Journal article

GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells
Hodgson, P., Hayne, M., Robson, A., Zhuang, Q., Danos, E. 28/01/2016 In: Journal of Applied Physics. 119, 4, 7 p.
Journal article

Peculiarities of the hydrogenated In(AsN) alloy
Birindelli, S., Kesaria, M., Giubertoni, D., Pettinari, G., Velichko, A., Zhuang, Q., Krier, A., Patane, A., Polimeni, A., Capizzi, M. 14/09/2015 In: Semiconductor Science and Technology. 30, p. 105030. 10 p.
Journal article

Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots
Chang, Y., Robson, A., Harrison, S., Zhuang, Q., Hayne, M. 22/06/2015 In: AIP Advances. 5, 6, 6 p.
Journal article

Realization of vertically aligned, ultra-high aspect ratio InAsSb nanowires on graphite
Anyebe, E., Sanchez, A., Hindmarsh, S., Chen, X., Shao, J., Rajpalke, M.K., Veal, T.D., Robinson, B., Kolosov, O., Anderson, F., Sandaram, R., Wang, Z.M., Falko, V., Zhuang, Q. 18/06/2015 In: Nano Letters. 15, 7, 8 p.
Letter

Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP
Wheatley, R., Kesaria, M., Mwast, L., Kirch, J., Kuech, T., Marshall, A., Zhuang, Q., Krier, A. 10/06/2015 In: Applied Physics Letters. 106, 4 p.
Journal article

Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers
Lu, Q., Zhuang, Q., Krier, A. 15/04/2015 In: Photonics. 2, 2, p. 414-425. 12 p.
Journal article

Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−xSbx nanowires
Anyebe, E., Rajpalke, M.K., Veal, T.D., Jin, C.J., Wang, Z.M., Zhuang, Q. 04/2015 In: Nano Research. 8, 4, p. 1309-1319. 11 p.
Journal article

A tunable nano-optofluidic polymer optical filter based on guided-mode resonance
Xiao, G., Zhu, Q., Shen, Y., Li, K., Liu, M., Zhuang, Q., Jin, C. 28/02/2015 In: Nanoscale. 7, 8, p. 3429-3434. 6 p.
Journal article

H-tailored surface conductivity in narrow band gap In(AsN)
Velichko, A.V., Patane, A., Capizzi, M., Sandall, I.C., Giubertoni, D., Makarovsky, O., Polimeni, A., Krier, A., Zhuang, Q., Tan, C.H. 12/01/2015 In: Applied Physics Letters. 106, 2, 4 p.
Journal article

Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy
Zhuang, Q., Anyebe, E., Chen, R., Liu, H., Sanchez, A., Rajpalke, M.K., Veal, T.D., Wang, Z.M., huang, y., Sun, H.D. 5/01/2015 In: Nano Letters. 15, 2, 8 p.
Letter

In(AsN) mid-infrared emission enhanced by rapid thermal annealing
Kesaria, M., Birindelli, S., A.V. Velichko, A., Zhuang, Q., Patane, A., Capizzi, M., Krier, A. 01/2015 In: Infrared Physics and Technology. 68, p. 138-142. 5 p.
Journal article

Self-catalysed InAs1− xSbx nanowires grown directly on bare Si substrates
Anyebe, E., Zhuang, Q. 12/2014 In: Materials Research Bulletin. 60, p. 572–575. 4 p.
Journal article

Hydrogenation of GaSb/GaAs quantum rings
Hodgson, P., Hayne, M., Ahmad Kamarudin, M., Zhuang, Q., Birindelli, S., Capizzi, M. 28/08/2014 In: Applied Physics Letters. 105, 5 p.
Journal article

Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels
Velichko, A.V., Makarovsky, O., Mori, N., Eaves, L., Krier, A., Zhuang, Q., Patane, A. 20/08/2014 In: Physical Review B. 90, 7 p.
Journal article

The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy
Anyebe, E., Zhuang, Q., Kesaria, M., Krier, A. 08/2014 In: Semiconductor Science and Technology. 29, 8, 7 p.
Journal article

Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy
Anyebe, E., Zhuang, Q., Sanchez, A.M., Lawson, S., Robson, A., Ponomarenko, L.A., Zhukov, A., Kolosov, O. 11/07/2014 In: physica status solidi (RRL) - Rapid Research Letters. 8, 7, p. 658–662. 5 p.
Journal article

Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy
Zhuang, Q., Anyebe, E., Sanchez, A.M., Rajpalke, M.K., Veal, T.D., Zhukov, A., Robinson, B., Anderson, F., Kolosov, O., Falko, V. 25/06/2014 In: Nanoscale Research Letters. 9, 7 p.
Journal article

InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers
Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R., Krier, A. 12/05/2014 In: Semiconductor Science and Technology. 29, 7, 8 p.
Journal article

Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers
Lu, Q., Zhuang, Q., Hayton, J., Yin, M., Krier, A. 2014 In: Applied Physics Letters. 105, 3, 3 p.
Journal article

Antimonide quantum dot nanostructures for novel photonic device applications
Krier, A., Carrington, P., Zhuang, Q., Young, R., Hayne, M., Lu, Q., James Asirvatham, J., Wagener, M., Botha, J., Koenraad, P., Smakman, E.P. 5/11/2013 In: The wonder of nanotechnology. SPIE
Chapter (peer-reviewed)

Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings
Hodgson, P., Young, R., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M. 28/10/2013 In: Physical Review B. 88, 15, 7 p.
Journal article

Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures
Hodgson, P.D., Young, R.J., Kamarudin, M.A., Carrington, P.J., Krier, A., Zhuang, Q.D., Smakman, E.P., Koenraad, P.M., Hayne, M. 21/08/2013 In: Journal of Applied Physics. 114, 7, 7 p.
Journal article

Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks
Mahajumi, A.S., Carrington, P., Kostakis, I., Missous, M., Sanchez, A., Zhuang, Q., Young, R., Hayne, M., Krier, A. 31/07/2013 In: Journal of Physics D: Applied Physics. 46, 30, 6 p.
Journal article

InAs-based dilute nitride materials and devices for the mid-infrared spectral range
Krier, A., De La Mare, M., Zhuang, Q., Carrington, P.J., Patane, A. 4/02/2013 In: Proceedings of SPIE. 8631
Journal article

Effects of substrate pm M comtent on the growth of the mid-infrared dilute nitride InAsN alloy
De La Mare, M., Zhuang, Q., Krier, A., Patane, A. 3/10/2012 In: Journal of Physics D: Applied Physics. 45, 39, p. 395103-395105. 3 p.
Journal article

Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor
Kozlova, N.V., Mori, N., Makarovsky, O., Eaves, L., Zhuang, Q., Krier, A., Patane, A. 2/10/2012 In: Nature Communications. 3, 5 p.
Journal article

Development of dilute nitride materials for mid-infrared diode lasers
Krier, A., de la Mare, M., Carrington, P.J., Thompson, M., Zhuang, Q., Patane, A., Kudrawiec, R. 09/2012 In: Semiconductor Science and Technology. 27, 9, 8 p.
Journal article

Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells
Carrington, P.J., Mahajumi, A.S., Wagener, M.C., Botha, J.R., Zhuang, Q., Krier, A. 15/05/2012 In: Physica B: Condensed Matter. 407, 10, p. 1493-1496. 4 p.
Journal article

Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.
Drachenko, O., Patane, A., Kozlova, N.V., Zhuang, Q., Krier, A., Eaves, L., Helm, M., EU Contract No. RII3-CT-2004-506239 (Funder), DFG Grant Nos. DR832/3-1 (Funder), DFG KO 3743/1-1 (Funder), AOBJ: 550341 (Funder) 04/2011 In: Applied Physics Letters. 98, 16, p. 162109.
Journal article

Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings
Kamarudin, M.A., Hayne, M., Young, R.J., Zhuang, Q.D., Ben, T., Molina, S.I. 10/03/2011 In: Physical Review B. 83, 11, 6 p.
Journal article

MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices
de la Mare, M., Krier, A., Zhuang, Q., Carrington, P., Patane, A. 2011 In: Proceedings of SPIE. 7945, 79450L
Journal article

Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes
Carrington, P., de la Mare, M., Cheetham, K.J., Zhuang, Q., Krier, A. 2011 In: Advances in OptoElectronics. 2011, n/a, 8 p.
Journal article

Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys
Kudrawiec, R., Latkowska, M., Misiewicz, J., Zhuang, Q., Godenir, A.M.R., Krier, A. 2011 In: Applied Physics Letters. 99, 1, 3 p.
Journal article

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy.
Ibanez, J., Oliva, R., de la Mare, M., Schmidbauer, M., Hernandez, S., Pellegrino, P., Scurr, D.J., Cusco, R., Artus, L., Shafi, M., Mari, R.H., Henini, M., Zhuang, Q., Godenir, A.M.R., Krier, A., Spanish Ministry of Education and Science Project No. MAT2007-63617 (Funder), EPRSC (UK) (Funder) 11/2010 In: Journal of Applied Physics. 108, 10, p. 103504.
Journal article

Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range.
de la Mare, M., Carrington, P.J., Wheatley, R., Zhuang, Q., Beanland, R., Sanchez, A.M., Krier, A., EPSRC Studentship for MDLM (Funder) 1/09/2010 In: Journal of Physics D: Applied Physics. 43, 34, p. 345103.
Journal article

Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy.
Makarovsky, O., Feu, W.H.M., Patane, A., Eaves, L., Zhuang, Q.D., Krier, A., Beanland, R., Airey, R. 1/02/2010 In: Applied Physics Letters. 96, 5, p. 052115.
Journal article

GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer.
Ahmad Kamarudin, M., Hayne, M., Zhuang, Q.D., Kolosov, O., Nuytten, T., Moshchalkov, V.V., Dinelli, F. 26/01/2010 In: Journal of Physics D: Applied Physics. 43, 6, p. 065402.
Journal article

Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth.
Chen, R., Phann, S., Sun, H.D., Zhuang, Q., Godenir, A.M.R., Krier, A. 28/12/2009 In: Applied Physics Letters. 95, 26, p. 261905.
Journal article

Molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN:Sb for mid-infrared applications.
Zhuang, Q., Krier, A. 15/12/2009 In: IET Optoelectronics. 3, 6, p. 248-258. 11 p.
Journal article

Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx.
Patane, A., Feu, W.H.M., Makarovsky, O., Drachenko, O., Eaves, L., Krier, A., Zhuang, Q.D., Helm, M., Goiran, M., Hill, G. 16/09/2009 In: Physical Review B. 80, 11, p. 115207.
Journal article

Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.
de la Mare, M., Zhuang, Q., Krier, A., Patane, A., Dhar, S. 22/07/2009 In: Applied Physics Letters. 95, 3, p. 031110.
Journal article

Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.
Carrington, P.J., Zhuang, Q., Yin, M., Krier, A. 07/2009 In: Semiconductor Science and Technology. 24, 7, p. 075001.
Journal article

Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys.
Kudrawiec, R., Misiewicz, J., Zhuang, Q., Godenir, A.M.R., Krier, A. 14/04/2009 In: Applied Physics Letters. 94, 15, p. 151902.
Journal article

InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications
Carrington, P.J., Solov'ev, V.A., Zhuang, Q., Vanov, S.V., Krier, A. 03/2009 In: Microelectronics Journal. 40, 3, p. 469-472. 4 p.
Journal article

Magnetoresistance and electron mobility in dilute nitride InAsN alloys
Zhuang, Q., Feu, W.H.M., Patane, A., Makarovsky, O., Allison, G., Eaves, L., De La Mare, M., Krier, A., Hill, G. 2009 In: AIP Conference Proceedings. 1288
Journal article

Electron coherence length and mobility in highly mismatched III-N-V alloys.
Patane, A., Allison, G., Eaves, L., Kozlova, N.V., Zhuang, Q.D., Krier, A., Hopkinson, M., Hill, G. 23/12/2008 In: Applied Physics Letters. 93, 25, p. 252106.
Journal article

Growth optimization of self-organized InSb/InAs quantum dots.
Zhuang, Q., Carrington, P.J., Krier, A. 13/11/2008 In: Journal of Physics D: Applied Physics. 41, 23, 4 p.
Journal article

Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance
Cripps, S.A., Hosea, T.J.C., Krier, A., Smirnov, V., Batty, P.J., Zhuang, Q.D., Lin, H.H., Liu, P.W., Tsai, G. 30/09/2008 In: Thin Solid Films. 516, 22, p. 8049-8058. 10 p.
Journal article

Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics
Zhuang, Q., Godenir, A., Krier, A., Tsai, G., Lin, H.H. 22/09/2008 In: Applied Physics Letters. 93, 12, p. 121903.
Journal article

Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.
Carrington, P.J., Solov'ev, V.A., Zhuang, Q., Krier, A., Ivanov, S.V. 1/09/2008 In: Applied Physics Letters. 93, 9, p. 091101.
Journal article

Photoluminescence in InAsN epilayers grown by molecular beam epitaxy
Zhuang, Q., Godenir, A., Krier, A. 10/06/2008 In: Journal of Physics D: Applied Physics. 41, 13, p. 132002.
Journal article

Room temperature photoluminescence at 4.5 mu m from InAsN
Zhuang, Q., Godenir, A.M.R., Krier, A., Lai, K.T., Haywood, S.K. 26/03/2008 In: Journal of Applied Physics. 103, 6, p. 063520.
Journal article

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes
Carrington, P., Solov'ev, V.A., Zhuang, Q., Ivanov, S.V., Krier, A. 1/02/2008 In: Proceedings of SPIE. 6900
Journal article

InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes
Solov'ev, V.A., Carrington, P., Zhuang, Q., Lai, K.T., Haywood, S.K., Ivanov, S.V., Krier, A. 2008 In: NARROW GAP SEMICONDUCTORS 2007. DORDRECHT : Springer p. 129-131. 3 p. ISBN: 978-1-4020-8424-9.
Conference contribution

InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes.
Solov'ev, V.A., Carrington, P., Zhuang, Q., Lai, K.T., Haywood, S.K., Ivanov, S.V., Krier, A. 2008 In: Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Bristol : Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol p. 129-131. 3 p. ISBN: 978-1-4020-8424-9.
Chapter

Strain enhancement during annealing of GaAsN alloys.
Zhuang, Q.D., Krier, A., Stanley, C.R. 15/05/2007 In: Journal of Applied Physics. 101, 10, p. 103536.
Journal article

Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy. .
Cripps, S.A., Hosea, T.J.C., Krier, A., Smirnov, V., Batty, P.J., Zhuang, Q.D., Lin, H.H., Liu, P.W., Tsai, G. 24/04/2007 In: Applied Physics Letters. 92, 17, p. 172106.
Journal article

Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. .
Liu, P.W., Tsai, G., Lin, H.H., Krier, A., Zhuang, Q.D., Stone, M, M. 13/11/2006 In: Applied Physics Letters. 89, 20, p. 201115.
Journal article

Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. .
Krier, A., Stone, M., Zhuang, Q.D., Liu, P.W., Tsai, G., Lin, H.H. 28/08/2006 In: Applied Physics Letters. 89, 9, p. 091110.
Journal article

Effect of As supply on nitrogen incorporation of MBE grown Ga(In)Nas/GaAs quantum well.
Zhuang, Q.D., Stanley, C. 2004 In: Proceedings of the 13th international semiconducting and insulating materials conference. Beijing, China
Conference contribution

Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice
Zhuang, Q., Yoon, S.F., Zheng, H.Q. 2001 In: Solid State Communications. 117, 8, p. 465-469. 5 p.
Journal article

Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction
Yuan, K., Radhakrishnan, K., Zheng, H.Q., Zhuang, Q., Ing, G.I. 2001 In: Thin Solid Films. 391, 1, p. 36-41. 6 p.
Journal article

Growth and emission tuning of InAs/InP quantum dots superlattice
Zhuang, Q., Yoon, S.F., Zheng, H.Q. 2001 In: Journal of Crystal Growth. 227-228, p. 1084-1088. 5 p.
Journal article

Photoluminescence properties of self-assembled InAs quantum dots grown on InP substrates by solid source molecular beam epitaxy
Zhuang, Q., Yoon, S.F., Zheng, H.Q. 2001 In: Journal of Vacuum Science and Technology B. 19, 4, p. 1475-1478. 4 p.
Journal article

Properties and turning of intraband optical absorption in inxga1-xas/gaas self-assembled quantum dot superlattice
Liu, B., Zhuang, Q., Yoon, S.F., Dai, J.H., Kong, M., Zeng, Y.P., Li, J.M., Lin, L.Y., Zhang, J.H. 2001 In: International Journal of Modern Physics B. 15, 13, p. 1959-1968. 10 p.
Journal article

Effect of matrix on InAs self-organized nanostructures on InP substrate
Zhuang, Q., Yoon, S.F., Zheng, H.Q. 2000 In: Proceedings Conference on Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. . IEEE p. 455-458. 4 p. ISBN: 0780366980 , 9780780366985.
Chapter

Effect of rapid thermal annealing on InGaAs/GaAs quantum wells
Zhuang, Q., Li, J.M., Zeng, Y.P., Yoon, S.F., Zheng, H.Q., Kong, M., Lin, L.Y. 2000 In: Journal of Crystal Growth. 212, 1-2, p. 352-355. 4 p.
Journal article

Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice
Zhuang, Q., Li, J.M., Wang, X.X., Zeng, Y.P., Wang, Y.T., Wang, B.Q., Pan, L., Wu, J., Kong, M., Lin, L.Y. 2000 In: Journal of Crystal Growth. 208, 1-4, p. 791-794. 4 p.
Journal article

Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy
Zhuang, Q., Yoon, S.F., Zheng, H.Q., Yuan, K.H. 2000 In: Journal of Crystal Growth. 216, 1-4, p. 57-61. 5 p.
Journal article

Influence of indium composition on the surface morphology of self-organized InxGa1−xAs quantum dots on GaAs substrates
Li, H.X., Zhuang, Q., Wang, Z.G., Daniels-Race, T. 2000 In: Journal of Applied Physics. 87, 1, p. 188-191. 4 p.
Journal article

Self-organization of the InGaAs/GaAs quantum dots superlattice
Zhuang, Q., Li, H., Pan, L., Li, J., Kong, M., Lin, L. 1999 In: Journal of Crystal Growth. 201-202, 1-4, p. 1161-1163. 3 p.
Journal article

Self-organization of wire-like InAs nanostructures on InP
Li, H., Zhuang, Q., Kong, X., Wang, Z., Daniels-Race, T. 1999 In: Journal of Crystal Growth. 205, 4, p. 613-617. 5 p.
Journal article

Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers
Zhuang, Q., Li, J.M., Zeng, Y.P., Pan, L., Chen, Y.H., Kong, M., Lin, L.Y. 1999 In: Journal of Electronic Materials. 28, 5, p. 503-505. 3 p.
Journal article

Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures
Zhuang, Q., Li, J.M., Zeng, Y.P., Pan, L., Li, H.X., Kong, M., Lin, L.Y. 1999 In: Journal of Crystal Growth. 200, 3-4, p. 375-381. 7 p.
Journal article

Asymmetric dark current in double-barrier quantum well infrared photodetectors
Zhuang, Q., Li, J., Lin, L. 1998 In: Proceedings of the Society of Photo-Optical Instrumentation Engineers . 3437, p. 391-395. 5 p.
Journal article

Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice
Zhuang, Q., Li, J.M., Li, H.X., Zeng, Y.P., Pan, L., Chen, Y.H., Kong, M., Lin, L.Y. 1998 In: Applied Physics Letters. 73, 25, p. 3706-3708. 3 p.
Journal article

Normally incident infrared absorption in vertically aligned InGaAs/GaAs quantum dot superlattice,
Zhuang, Q., Li, J.M., Zeng, Y.P., Pan, L., Kong, M., Lin, L.Y. 1998 In: Journal of Infrared and Microwave . 17, p. 477-?.
Journal article