JEOL JBX-5500FS
High-resolution electron beam lithography system with a beam diameter of 2nm. Using 50 KeV fine electron beam, line widths down to 10nm are achievable. The stage is positioned and controlled using laser interferometer which gives the line stitching accuracy of 40nm.
- Electron emitter: TFE (ZrO/W)
- Acceleration Voltage: 50 keV
- Minimum beam diameter: 2 nm
- Minimum line width: 10 nm
- Beam current: 30 pA - 20 nA
- Field size: 100 μm, 1000 μm
- Beam scanning speed: 12 MHz