Graphene and Derivatives Based Electronic Memory and Sensor Devices

Friday 4 December 2020, 3:00pm to 4:00pm

Venue

Online via MS Teams

Open to

Alumni, Postgraduates, Staff, Undergraduates

Registration

Registration not required - just turn up

Event Details

Condensed Matter Seminar

After the discovery of graphene, its derivatives (graphene oxide (GO), reduced graphene oxide (rGO)) have received significant attention worldwide, ignited intense research activities for next generation nano-electronic applications. The interest in graphene, GO and rGO results from their superior electronic, optical, mechanical and intrinsic properties along with low dimensionalities (monolayer ≤ 1 nm). The flexibility of tuneable band gaps in solution processable GO and rGO based on the degree of oxidation/reduction and ease of functionalization has led to the fabrication of various electronic, memory and sensor devices using GO, rGO.

Here, I will present my work on graphene, GO, rGO and its functionalized derivatives for applications as (i) metal free, flexible field effect transistors developed using printed approach [1]; (ii) floating gate for non-volatile memory devices [2]; (iii) resistive layers in memristors [3]; (iv) sensing layers for skin-conformable temperature sensors [4] and detection of ionic contaminants in drinking water [5]. The performance of the fabricated devices utilizing graphene and its functionalized derivatives demonstrate its feasibility for next-generation technologies operating under low-bias conditions.

References

[1] M. Soni, P. Kumar, J. Pandey, S. K. Sharma, and A. Soni, "Scalable and site specific functionalization of reduced graphene oxide for circuit elements and flexible electronics," Carbon, vol. 128, pp. 172-178, 2018.

[2] M. Soni, A. Soni, and S. K. Sharma, "NrGO Floating Gate/SiOXNY Tunneling Layer Stack for Nonvolatile Flash Memory Applications," IEEE Transactions on Device and Materials Reliability, vol. 20, no. 3, pp. 570-575, 2020.

[3] S. Choudhary, M. Soni, and S. K. Sharma, "Low voltage & controlled switching of MoS2-GO resistive layers based ReRAM for non-volatile memory applications," Semiconductor Science and Technology, vol. 34, no. 8, p. 085009, 2019.[4] M. Soni, M. Bhattacharjee, M. Ntagios, and R. Dahiya, "Printed Temperature Sensor Based on PEDOT: PSS-Graphene Oxide Composite," IEEE Sensors Journal, vol. 20, no. 14, pp. 7525-7531, 2020, doi: 10.1109/JSEN.2020.2969667.

[5] M. Soni, P. Kumar, A. Soni, and S. K. Sharma, "Selective detection of F − using Al microarrays integrated graphene oxide," Sensors and Actuators B: Chemical, vol. 247, pp. 224-227, 2017, doi: 10.1016/j.snb.2017.02.142.

If you have not received a Teams link for this event and would like to attend, please contact Professor Robert Young.

Speaker

Dr. Mahesh Soni (Lancaster University)

Gallery

Contact Details

Name Professor Robert Young
Email

r.j.young@lancaster.ac.uk